Уноси · Publikacije Univerziteta u Banjoj Luci

SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs (2015-06)

N. Janković, T. Pešić-Brđanin, SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs, Journal of Computational Electronics, Vol. 14, No. 3, pp. 844 - 851, Jun, 2015

Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge (2016-09)

T. Pešić-Brđanin, N. Janković, Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge, Proceedings of IEEE Region 8 EuroCon Conference, pp. 273 - 276, Sep, 2016

Distributed Parameters BJT Model for Arbitrary Injection Level (2000)

T. Pešić, N. Janković, Distributed Parameters BJT Model for Arbitrary Injection Level, ELECTRONICS, Vol. 4, No. 2, pp. 58 - 63, 2000

An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors (2001)

T. Pešić, N. Janković, An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors, MICROELECTRONICS JOURNAL, Vol. 32, No. 9, pp. 713 - 718, 2001

Current Gain Frequency Characteristics of Ultra-Narrow Base Bipolar Transistors (2002)

T. Pešić, N. Janković, J. Karamarković, Current Gain Frequency Characteristics of Ultra-Narrow Base Bipolar Transistors, ELECTRONICS, Vol. 6, No. 1, pp. 30 - 33, 2002

3D Numerical Simulation and the Equivalent Circuit for Electrical Modeling of Cross-shaped Hall Sensor (2004)

T. Pešić, N. Janković, J. Karamarković, 3D Numerical Simulation and the Equivalent Circuit for Electrical Modeling of Cross-shaped Hall Sensor, ELECTRONICS, Vol. 8, No. 2, pp. 9 - 13, 2004

1D Physical Based Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis (2004)

N. Janković, T. Pešić, J. Karamarković, 1D Physical Based Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis, Journal of Computational Electronics, Vol. 3, pp. 13 - 25, 2004

Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET (2005)

N. Janković, T. Pešić, Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET, SOLID-STATE ELECTRONICS, Vol. 49, pp. 1086 - 1089, 2005

A Compact Non-Quasi-Static MOSFET Model Based on the Equivalent Non-Linear Transmission Line (2005)

T. Pešić, N. Janković, A Compact Non-Quasi-Static MOSFET Model Based on the Equivalent Non-Linear Transmission Line, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTE, Vol. 24, pp. 1550 - 1561, 2005

Modeling of Strained-Si/SiGe NMOS Transistors Including DC Self-Heating (2006)

N. Janković, T. Pešić, Modeling of Strained-Si/SiGe NMOS Transistors Including DC Self-Heating, SOLID-STATE ELECTRONICS, Vol. 50, pp. 496 - 499, 2006

All Injection Level Power PiN Diode Model Including Temperature Dependence (2007)

N. Janković, T. Pešić, P. Igić, All Injection Level Power PiN Diode Model Including Temperature Dependence, SOLID-STATE ELECTRONICS, Vol. 51, pp. 719 - 725, 2007

Dynamic MAGFET Model for Sensor Simulations (2007)

N. Janković, T. Pešić, D. Pantić, Dynamic MAGFET Model for Sensor Simulations, IET CIRCUITS DEVICES & SYSTEMS, Vol. 1, pp. 270 - 274, 2007

Strained Si/SiGe MOS transistor model (2009)

T. Pešić-Brđanin, N. Janković, Strained Si/SiGe MOS transistor model, ELECTRONICS, Vol. 13, pp. 18 - 22, 2009

Unosi

SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs (2015-06)

Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge (2016-09)

Distributed Parameters BJT Model for Arbitrary Injection Level (2000)

An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors (2001)

Current Gain Frequency Characteristics of Ultra-Narrow Base Bipolar Transistors (2002)

3D Numerical Simulation and the Equivalent Circuit for Electrical Modeling of Cross-shaped Hall Sensor (2004)

1D Physical Based Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis (2004)

Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET (2005)

A Compact Non-Quasi-Static MOSFET Model Based on the Equivalent Non-Linear Transmission Line (2005)

Modeling of Strained-Si/SiGe NMOS Transistors Including DC Self-Heating (2006)

All Injection Level Power PiN Diode Model Including Temperature Dependence (2007)

Dynamic MAGFET Model for Sensor Simulations (2007)

Strained Si/SiGe MOS transistor model (2009)

Uticaj baznih kvazi-balističkih efekata na električne karakterisike bipolarnih tranzistora (1997)

Transmission line model of arbitrarily doped base including all injection levels and Kirk effect (1998)

Model ekvivalentnog voda za transport manjinskih nosilaca pri proizvoljnim nivoima injekcije (1998)

Modelovanje Kirkovog efekta kod nelinearnog nehomogenog voda sa gubicima pri proizvoljnim nivoima injekcije (1999)

An Analytical Approach to Kirk Effect Modelling (2000)

Transient analysis of BJT using all injection level TLEC model (2000)

Analitički pristup Kirkovom efektu za primenu u modelovanju bipolarnih tranzistora (2000)