Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation
Naslov
Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation
Identifikator
/unibl/sci/idNaucniRad:549
Tip
Pronađite slične unoseConference Paper
Datum
Bibliografski citat
T. Pešić, N. Janković, J. Karamarković, Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation, pp. 187 - 190, 2002
Početna stranica
187
Krajnja stranica
190
Prezentovano
IV International Conference on Advanced Semiconductor Devices and Microsystems - ASDAM
Lista autora
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