Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET

Naslov

Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET

Identifikator

/unibl/sci/idNaucniRad:535

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Datum

Bibliografski citat

N. Janković, T. Pešić, Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET, SOLID-STATE ELECTRONICS, Vol. 49, pp. 1086 - 1089, 2005

Početna stranica

1086

Krajnja stranica

1089

Je dio

SOLID-STATE ELECTRONICS
0038-1101

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