Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET
Naslov
Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET
Identifikator
/unibl/sci/idNaucniRad:535
Tip
Pronađite slične unoseAcademic Article
Datum
Bibliografski citat
N. Janković, T. Pešić, Non-Quasi-Static Physics Based Circuit Model of Fully-Depleted Double-Gate SOI MOSFET, SOLID-STATE ELECTRONICS, Vol. 49, pp. 1086 - 1089, 2005
Početna stranica
1086
Krajnja stranica
1089
Je dio
SOLID-STATE ELECTRONICS
0038-1101
Position: 28790 (37 views)