SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs

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SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs

Идентификатор

/unibl/sci/idNaucniRad:20376

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Библиографски цитат

N. Janković, T. Pešić-Brđanin, SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs, Journal of Computational Electronics, Vol. 14, No. 3, pp. 844 - 851, Jun, 2015

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844

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851

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