SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
Naslov
SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
Identifikator
/unibl/sci/idNaucniRad:20376
Tip
Pronađite slične unoseAcademic Article
Datum
Pronađite slične unose2015-06
Bibliografski citat
N. Janković, T. Pešić-Brđanin, SPICE modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs, Journal of Computational Electronics, Vol. 14, No. 3, pp. 844 - 851, Jun, 2015
Početna stranica
844
Krajnja stranica
851
Je dio
Journal of Computational Electronics
1569-8025
Position: 43743 (119 views)