Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge

Title

Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge

Identifier

/unibl/sci/idNaucniRad:20378

Type

See all items with this valueConference Paper
See all items with this valuetext

Date

See all items with this value2016-09

Bibliographic Citation

T. Pešić-Brđanin, N. Janković, Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge, Proceedings of IEEE Region 8 EuroCon Conference, pp. 273 - 276, Sep, 2016

page start

273

page end

276

presented at

IEEE Region 8 EuroCon Conference

Is Part Of

See all items with this valueProceedings of IEEE Region 8 EuroCon Conference

Relation

See all items with this valueElektrotehnički fakultet

list of authors

See all items with this valueTatjana Pešić-Brđanin
See all items with this valueNebojša Janković

Position: 56778 (110 views)