Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge
Title
Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge
Identifier
/unibl/sci/idNaucniRad:20378
Type
See all items with this valueConference Paper
Date
Bibliographic Citation
T. Pešić-Brđanin, N. Janković, Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge, Proceedings of IEEE Region 8 EuroCon Conference, pp. 273 - 276, Sep, 2016
page start
273
page end
276
presented at
IEEE Region 8 EuroCon Conference
Is Part Of
See all items with this valueProceedings of IEEE Region 8 EuroCon Conference
list of authors
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