Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge
Naslov
Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge
Identifikator
/unibl/sci/idNaucniRad:20378
Tip
Pronađite slične unoseConference Paper
Datum
Pronađite slične unose2016-09
Bibliografski citat
T. Pešić-Brđanin, N. Janković, Sub-circuit model of fully-depleted double-gae FinFET including the effects of oxide and interface trapped charge, Proceedings of IEEE Region 8 EuroCon Conference, pp. 273 - 276, Sep, 2016
Početna stranica
273
Krajnja stranica
276
Prezentovano
IEEE Region 8 EuroCon Conference
Je dio
Proceedings of IEEE Region 8 EuroCon Conference
Position: 56788 (110 views)