An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors
Title
An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors
Identifier
/unibl/sci/idNaucniRad:539
Type
See all items with this valueAcademic Article
Date
Bibliographic Citation
T. Pešić, N. Janković, An Analytical Model of the Inverse Base Width Modulation Effect in SiGe Graded Heterojunction Bipolar Transistors, MICROELECTRONICS JOURNAL, Vol. 32, No. 9, pp. 713 - 718, 2001
page start
713
page end
718
Is Part Of
See all items with this valueMICROELECTRONICS JOURNAL
See all items with this value0026-2692
list of authors
Position: 35807 (29 views)